Proximity doping effects in epitaxial graphene: substrate, growth and postgrowth treatment (S2)
Project description
This proposal is part of the DFG research unit FOR5242 "Proximity-induced correlation effects in low dimensional systems”. In this project we use our large-area, ultra-smooth epitaxial graphene as a basis to investigate proximity doping effects which are caused by facet related stacking order induced doping of the SiC substrate below and post-growth molecular doping above the 2-dimensional graphene layer. The goal is the highest possible control of the carrier density and by this giving access to fundamental effects in quantum transport experiments close to the charge neutrality point.
Composition of the project group
- Klaus Pierz, project leader
- Hans-Werner Schumacher
- Frank Hohls
- Matthias Kruskopf
- Stefan Wundrack
- Christopher Habenschaden
- Sibylle Sievers
- Atasi Chatterjee
- Yefei Yin
- Julia Guse
Project-related publications
Performance and Stability Assessment of Graphene-Based Quantum Hall Devices for Resistance Metrology
A. Chatterjee , M. Kruskopf , M. Götz , Y. Yin , E. Pesel , P. Gournay , B. Rolland , J. Kučera , S. Bauer , K. Pierz, B. Schumacher, H. Scherer, IEEE 72, 1502206 (2023)
Far-from-Equilibrium Electron–Phonon Interactions in Optically Excited Graphene
M. Düvel, M. Merboldt, J. P. Bange, H. Strauch, M. Stellbrink, K. Pierz, H. W. Schumacher, D. Momeni, D. Steil, G. S. M. Jansen, S. Steil, D. Novko, S. Mathias, M. Reutzel, Nano Lett. 22, 4897–4904 (2022)
Impact of Polymer-Assisted Epitaxial Graphene Growth on Various Types of SiC Substrates
A. Chatterjee, M. Kruskopf, S. Wundrack, P. Hinze, K. Pierz, R. Stosch, H. Scherer, ACS Appl. Electron. Mater. 11, XXX-XXX (2022)
Tailoring Permanent Charge Carrier Densities in Epitaxial Graphene on SiC by Functionalization with F4-TCNQ
Y. Yin, A. Chatterjee, D. Momeni, M. Kruskopf, M. Götz, S. Wundrack, F. Hohls, K. Pierz, H. W. Schumacher, Adv. Physics Res. 1, 1 (2022)
Liquid metal intercalation of epitaxial graphene: Large-area gallenene layer fabrication through gallium self-propagation at ambient conditions
S. Wundrack, D. Momeni, W. Dempwolf, N. Schmidt, K. Pierz, L. Michaliszyn, H. Spende , A. Schmidt, H. W. Schumacher, R. Stosch, and A. Bakin, Phys. Rev. Mater. 5, 024006 (2021)
Silicon carbide stacking-order-induced doping variation in epitaxial graphene
A. Sinterhauf, G. A. D. Momeni Pakdehi, P. Schadlich, T. T. N. Nguyen, A. A. Zakharov, S. Wundrack, E. Najafidehaghani, F. Speck, K. Pierz, T. Seyller, C. Tegenkamp, H. W. Schumacher, Adv. Funct. Mater. 30, 2004695 (2020)
Substrate induced nanoscale resistance variation in epitaxial graphene
A. Sinterhauf, G. A. Traeger, D. M. Pakdehi, P. Schadlich, P. Wilke, F. Speck, T. Seyller, C. Tegenkamp, K. Pierz, H. W. Schumacher, M. Wenderoth, Nat. Commun. 11, 555 (2020)
Probing the structural transition from buffer layer to quasifreestanding monolayer graphene by Raman spectroscopy
S. Wundrack, D. Momeni Pakdehi, P. Schadlich, F. Speck, K. Pierz, T. Seyller, H. W. Schumacher, A. Bakin, R. Stosch, Phys. Rev. B 99, 45443 (2019)
Homogeneous Large-Area Quasi-Free-Standing Monolayer and Bilayer Graphene on SiC
D. Momeni Pakdehi, K. Pierz, S. Wundrack, J. Aprojanz, T.T.N. Nguyen, T. Dziomba, F. Hohls, A. Bakin, R. Stosch, C. Tegenkamp, F.J. Ahlers, H.W. Schumacher, ACS Appl. Nano Mater. 2, 844 (2019)
Minimum Resistance Anisotropy of Epitaxial Graphene on SiC
D. Momeni Pakdehi, J. Aprojanz, A. Sinterhauf, K. Pierz, M. Kruskopf, P. Willke, J. Baringhaus, J. P. Stockmann, G. A. Traeger, F. Hohls, C. Tegenkamp, M. Wenderoth, F. J. Ahlers, H. W. Schumacher, ACS Appl. Mater. Interfaces 10, 6039 (2018)
AC quantum Hall effect in epitaxial graphene
F. Lüönd, C.-C. Kalmbach, F. Overney, J. Schurr, B. Jeanneret, A. Müller, M. Kruskopf, K. Pierz, F. Ahlers, IEEE Trans. Instr. and Meas. 66, 1459 (2017)
Magnetocapacitance and dissipation factor of epitaxial graphene-based quantum Hall effect device
J. Schurr, C.-C. Kalmbach, F. J. Ahlers, F. Hohls, M. Kruskopf, A. Müller, K. Pierz, T. Bergsten, R.J. Haug, Phys. Rev. B 96, 155443 (2017)
Comeback of epitaxial graphene for electronics: large-area growth of bilayer-free graphene on SiC
M. Kruskopf, D. Momeni Pakdehi, K. Pierz, S. Wundrack, R. Stosch, T. Dziomba, M. Gotz, J. Baringhaus, J. Aprojanz, C. Tegenkamp, J. Lidzba, T. Seyller, F. Hohls, F. J. Ahlers, H. W. Schumacher, 2D Mater. 3, 41002 (2016)
Nonequilibrium mesoscopic conductance fluctuations as the origin of 1/f noise in epitaxial graphene
C. C. Kalmbach, F.J. Ahlers, J. Schurr, A. Müller, J. Feilhauer, M. Kruskopf, K. Pierz, F. Hohls, R.J. Haug, Phys. Rev. B 94, 205430 (2016)
Klaus Pierz
PTB Braunschweig
+49 531 592-2412
klaus.pierz@ptb.de
https://www.ptb.de/cms/de/ptb/fachabteilungen/abt2/fb-25/ag-253/mitarbeiter.html
