Proximity doping effects in epitaxial graphene: substrate, growth and postgrowth treatment (S2)

Project description

This proposal is part of the DFG research unit FOR5242 "Proximity-induced correlation effects in low dimensional systems”. In this project we use our large-area, ultra-smooth epitaxial graphene as a basis to investigate proximity doping effects which are caused by facet related stacking order induced doping of the SiC substrate below and post-growth molecular doping above the 2-dimensional graphene layer. The goal is the highest possible control of the carrier density and by this giving access to fundamental effects in quantum transport experiments close to the charge neutrality point.

Composition of the project group

Project-related publications

Liquid metal intercalation of epitaxial graphene: Large-area gallenene layer fabrication through gallium self-propagation at ambient conditions

S. Wundrack, D. Momeni, W. Dempwolf, N. Schmidt, K. Pierz, L. Michaliszyn, H. Spende , A. Schmidt, H. W. Schumacher, R. Stosch, and A. Bakin, Phys. Rev. Mater. 5, 024006 (2021)


Silicon carbide stacking-order-induced doping variation in epitaxial graphene

A. Sinterhauf, G. A. D. Momeni Pakdehi, P. Schadlich, T. T. N. Nguyen, A. A. Zakharov, S. Wundrack, E. Najafidehaghani, F. Speck, K. Pierz, T. Seyller, C. Tegenkamp, H. W. Schumacher, Adv. Funct. Mater. 30, 2004695 (2020)


Substrate induced nanoscale resistance variation in epitaxial graphene

A. Sinterhauf, G. A. Traeger, D. M. Pakdehi, P. Schadlich, P. Wilke, F. Speck, T. Seyller, C. Tegenkamp, K. Pierz, H. W. Schumacher, M. Wenderoth, Nat. Commun. 11, 555 (2020)


Probing the structural transition from buffer layer to quasifreestanding monolayer graphene by Raman spectroscopy

S. Wundrack, D. Momeni Pakdehi, P. Schadlich, F. Speck, K. Pierz, T. Seyller, H. W. Schumacher, A. Bakin, R. Stosch, Phys. Rev. B 99, 45443 (2019)


Homogeneous Large-Area Quasi-Free-Standing Monolayer and Bilayer Graphene on SiC

D. Momeni Pakdehi, K. Pierz, S. Wundrack, J. Aprojanz, T.T.N. Nguyen, T. Dziomba, F. Hohls, A. Bakin, R. Stosch, C. Tegenkamp, F.J. Ahlers, H.W. Schumacher, ACS Appl. Nano Mater. 2, 844 (2019)


Minimum Resistance Anisotropy of Epitaxial Graphene on SiC

D. Momeni Pakdehi, J. Aprojanz, A. Sinterhauf, K. Pierz, M. Kruskopf, P. Willke, J. Baringhaus, J. P. Stockmann, G. A. Traeger, F. Hohls, C. Tegenkamp, M. Wenderoth, F. J. Ahlers, H. W. Schumacher, ACS Appl. Mater. Interfaces 10, 6039 (2018)


AC quantum Hall effect in epitaxial graphene

F. Lüönd, C.-C. Kalmbach, F. Overney, J. Schurr, B. Jeanneret, A. Müller, M. Kruskopf, K. Pierz, F. Ahlers, IEEE Trans. Instr. and Meas. 66, 1459 (2017)


Magnetocapacitance and dissipation factor of epitaxial graphene-based quantum Hall effect device

J. Schurr, C.-C. Kalmbach, F. J. Ahlers, F. Hohls, M. Kruskopf, A. Müller, K. Pierz, T. Bergsten, R.J. Haug, Phys. Rev. B 96, 155443 (2017)


Comeback of epitaxial graphene for electronics: large-area growth of bilayer-free graphene on SiC

M. Kruskopf, D. Momeni Pakdehi, K. Pierz, S. Wundrack, R. Stosch, T. Dziomba, M. Gotz, J. Baringhaus, J. Aprojanz, C. Tegenkamp, J. Lidzba, T. Seyller, F. Hohls, F. J. Ahlers, H. W. Schumacher, 2D Mater. 3, 41002 (2016)


Nonequilibrium mesoscopic conductance fluctuations as the origin of 1/f noise in epitaxial graphene

C. C. Kalmbach, F.J. Ahlers, J. Schurr, A. Müller, J. Feilhauer, M. Kruskopf, K. Pierz, F. Hohls, R.J. Haug, Phys. Rev. B 94, 205430 (2016)


Klaus Pierz
PTB Braunschweig
+49 531 592-2412

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