Spin-orbit coupling and electronic correlation effects in epitaxial graphene studied by surface transport (E2)

Project description

Proximity coupling is a promising concept to tune graphene's transport properties. By studying the impact of hybridization, symmetry, doping and quasiparticle interactions, controlled coupling to Rashba interface states, Mott-phases and metallic quantum films will be realized and analyzed by means of nanoscale- and magnetotransport. Charge carrier mobilities will be analyzed with respect to their concentration, spin-orbit coupling and ground state by temperature and B-field dependent measurements under control of intrinsic and interfacial defects. Besides the analysis of samples from project partners, our proposed work will focus on adsorption and intercalation of Pb, Sn, Bi, BiSb as well as organic molecules on various epitaxial graphene on insulation SiC substrates. By means of defined doping lattices, Klein tunneling quantum transport phenomena will be studied.

Composition of the project group

Project-related publications

Proximity-induced gap opening by twisted plumbene in epitaxial graphene

C. Ghosal, M. Gruschwitz, J. Koch, S. Gemming, C. Tegenkamp, Phys. Rev. Lett. 129, 116802 (2022)


Sn intercalation into the BL/SiC(0001) interface: A detailed SPA-LEED investigation

Z. Mamiyev, C. Tegenkamp, Surfaces and Interfaces 34, 102304 (2022)


Surface Transport Properties of Pb-intercalated Graphene

M. Gruschwitz, C. Ghosal, T.-H. Shen, S. Wolff, T. Seyller, C. Tegenkamp, Materials 14, 7706 (2021)


Silicon carbide stacking-order-induced doping variation in epitaxial graphene

A. Sinterhauf, G. A. D. Momeni Pakdehi, P. Schadlich, T. T. N. Nguyen, A. A. Zakharov, S. Wundrack, E. Najafidehaghani, F. Speck, K. Pierz, T. Seyller, C. Tegenkamp, H. W. Schumacher, Adv. Funct. Mater. 30, 2004695 (2020)


High mobility epitaxial graphene on Ge/Si(100) substrates

J. Aprojanz, P. Rosenzweig, T. T. N. Nguyen, H. Karakachian, K. Küster, U. Starke, M. Lukosius, G. Lippert, A. Sinterhauf, M. Wenderoth, A. A. Zakharov, C. Tegenkamp, ACS Appl. Mater. Interfaces 12, 43065 (2020)


Substrate induced nanoscale resistance variation in epitaxial graphene

A. Sinterhauf, G. A. Traeger, D. M. Pakdehi, P. Schadlich, P. Wilke, F. Speck, T. Seyller, C. Tegenkamp, K. Pierz, H. W. Schumacher, M. Wenderoth, Nat. Commun. 11, 555 (2020)


Thickness dependent coherent and incoherent scattering in electronic transport through epitaxial nontrivial Bi quantum films

D. Abdelbarey, J. Koch, Z. Mamiyev, C. Tegenkamp, H. Pfnür, Phys. Rev. B 102, 115409 (2020)


Introducing strong correlation effects into graphene by gadolinium intercalation

S. Link, S. Forti, A. Stohr, K. Küster, M. Rosner, D. Hirschmeier, C. Chen, J. Avila, M. C. Asensio, A. A. Zakharov, T. O. Wehling, A. I. Lichtenstein, M. I. Katsnelson, U. Starke, Phys. Rev. B 100, 121407(R) (2019)


Probing the structural transition from buffer layer to quasifreestanding monolayer graphene by Raman spectroscopy

S. Wundrack, D. Momeni Pakdehi, P. Schadlich, F. Speck, K. Pierz, T. Seyller, H. W. Schumacher, A. Bakin, R. Stosch, Phys. Rev. B 99, 45443 (2019)


Charge-transfer transition in Au-induced quantum wires on Si(553)

F. Edler, I. Miccoli, H. Pfnür, C. Tegenkamp, Phys. Rev. B 100, 045419 (2019)


Epitaxial graphene on 6H-SiC(0001): Defects in SiC investigated by STEM

M. Gruschwitz, H. Schletter, S. Schulze, I. Alexandrou, C. Tegenkamp, Phys. Rev. Mater. 3, 094004 (2019)


Minimum Resistance Anisotropy of Epitaxial Graphene on SiC

D. Momeni Pakdehi, J. Aprojanz, A. Sinterhauf, K. Pierz, M. Kruskopf, P. Willke, J. Baringhaus, J. P. Stockmann, G. A. Traeger, F. Hohls, C. Tegenkamp, M. Wenderoth, F. J. Ahlers, H. W. Schumacher, ACS Appl. Mater. Interfaces 10, 6039 (2018)


Graphene Ribbon Growth on Structured Silicon Carbide

A. Stohr, J. Baringhaus, J. Aprojanz, S. Link, C. Tegenkamp, Y. Niu, A. A. Zakharov, C. Chen, J. Avila, M. C. Asensio, U. Starke, Ann. Phys. (Berl.) 529, 1700052 (2017)


Comeback of epitaxial graphene for electronics: large-area growth of bilayer-free graphene on SiC

M. Kruskopf, D. Momeni Pakdehi, K. Pierz, S. Wundrack, R. Stosch, T. Dziomba, M. Gotz, J. Baringhaus, J. Aprojanz, C. Tegenkamp, J. Lidzba, T. Seyller, F. Hohls, F. J. Ahlers, H. W. Schumacher, 2D Mater. 3, 41002 (2016)


Surface state conductivity in epitaxially grown Bi1-xSbx (111) films

J. Koch, P. Kröger, H. Pfnür, C. Tegenkamp, New J. Phys. 18, 093012 (2016)


Ballistic bipolar junctions in chemically gated graphene ribbons

J. Baringhaus, A. Stohr, S. Forti, U. Starke, C. Tegenkamp, Sci. Rep. 5, 9955 (2015)


Observation of correlated spin-orbit or in a strongly anisotropic quantum wire system

C. Brand, H. Pfnür, G. Landolt, S. Muff, J. H. Dil, T. Das, C. Tegenkamp, Nat. Commun. 6, 8118 (2015)


Exceptional ballistic transport in epitaxial graphene nanoribbons

J. Baringhaus, M. Ruan, F. Edler, A. Tejeda, M. Sicot, A. Taleb-Ibrahimi, A.-P. Li, Z. Jiang, E. H. Conrad, C. Berger, C. Tegenkamp, W. A. de Heer, Nature 506, 349 (2014)


Snapshots of non-equilibrium Dirac carrier distributions in graphene

I. Gierz, J. C. Petersen, M. Mitrano, C. Cacho, I. C. E. Turcu, E. Springate, A. Stohr, A. Köhler, U. Starke, A. Cavalleri, Nat. Mater. 12, 1119 (2013)


Plasmon electron-hole resonance in epitaxial graphene

C. Tegenkamp, H. Pfnür, T. Langer, J. Baringhaus, H. W. Schumacher, J. Phys. Condens. Matter 23, 012001 (2011)


Christoph Tegenkamp
TU Chemnitz
+49 371 531-33103


Logo TU Chemntiz Logo U Regensburg Logo U Hamburg Logo U Göttingen Logo PTB Logo MPI für Festkörperforschung